ZTX614 High Gain Darlington NPN TO-226 100V Transistor
NPN Darlington Transistor. This device is designed for applications requiring extremely high gain at collector currents to 0.5A and high breakdown voltage.
- Dimensions (mm): 7.87 x 4.7 x 3.93 (max)
- Lead spacing (mm): 1.4 individual (max)
- Lead Length (mm): 14.47 (min)
- Polarity: NPN
- C-E Voltage VCEO: 100 V
- C-B Voltage VCBO: 120 V
- E-B Voltage VEBO: 10 V
- IC Collector Current: 800 mA
- TJ, TSTG Operating and Storage Junction Temperature Range: -55 ~ +150 °C