2SK170BL Toshiba Low Noise N Channel Fet
Silicon N Channel Junction Type. Low Noise Audio Amplifier Applications. Recommended for first stages of EQ and M.C. head amplifiers. Low Noise Audio Amplifier Applications
Hard to find Toshiba low noise N channel fet.
Hard to find Toshiba low noise N channel fet.
- Dimensions (mm): 5.1 x 4.7 x 4.1 (max)
- Lead spacing (mm): 1.27 individual (max)
- Lead Length (mm): 12.7 (min)
- Recommended for first stages of EQ and M.C. head amplifiers.
- High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA)
- High breakdown voltage: VGDS = −40 V
- Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA