2N3055 GP Power Amp NPN 115W 60V Transistor
Complementary silicon power transistors are designed for general-purpose switching and amplifier applications.
- Dimensions: 39.37 mm x 26.67mm
- Mounting Centers: 30.15 mm
- Pin spacing: 10.92 mm
- Pin length: 12.19 mm (max)
- Polarity: NPN
Features:
- DC Current Gain - hFE = 20−70 @ IC = 4 Adc
- Collector-Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
- Excellent Safe Operating Area